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The E3 Defect in Mg x Zn1−x O

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Abstract

The authors used highly rectifying PdO y /Mg x Zn1−x O Schottky barriers to determine the apparent capture cross-section and the thermal activation energy of the E3 defect in Mg x Zn1−x O thin films by thermal admittance spectroscopy and deep-level transient spectroscopy for x < 0.08. The samples were grown by pulsed-laser deposition. It is observed that both the apparent capture cross-section and the thermal activation energy increase with increasing Mg mole fraction.

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Authors and Affiliations

  1. Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5, 04103, Leipzig, Germany

    H. von Wenckstern, K. Brachwitz, M. Schmidt, C. P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz & M. Grundmann

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  1. H. von Wenckstern
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  2. K. Brachwitz
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  3. M. Schmidt
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  4. C. P. Dietrich
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  5. M. Ellguth
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  6. M. Stölzel
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  7. M. Lorenz
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  8. M. Grundmann
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Correspondence to H. von Wenckstern.

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von Wenckstern, H., Brachwitz, K., Schmidt, M. et al. The E3 Defect in Mg x Zn1−x O. J. Electron. Mater. 39, 584–588 (2010). https://doi.org/10.1007/s11664-009-0967-0

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  • DOI: https://doi.org/10.1007/s11664-009-0967-0

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