Abstract
The authors report on the fabrication of transparent rectifying contacts by reactive sputtering of silver or platinum on heteroepitaxially grown zinc oxide. The contacts exhibit Schottky-like current–voltage behavior; the effective barrier height is \(0.73\,\hbox{eV}\) for both materials. In photovoltaic mode, the transparent rectifying contacts reach external quantum efficiencies as high as 32% and responsivities as high as \(0.1\,\hbox{A/W}\).
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An erratum to this article can be found at http://dx.doi.org/10.1007/s11664-011-1566-4
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Lajn, A., Schmidt, M., von Wenckstern, H. et al. Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO. J. Electron. Mater. 40, 473–476 (2011). https://doi.org/10.1007/s11664-010-1395-x
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DOI: https://doi.org/10.1007/s11664-010-1395-x