Stopping power of fluorides and semiconductor organic films for low-velocity protons

L. N. Serkovic Loli, E. A. Sánchez, O. Grizzi, and N. R. Arista
Phys. Rev. A 81, 022902 – Published 16 February 2010

Abstract

A combined experimental and theoretical study of the energy loss of protons in fluorides and organic films is presented. The measurements were performed in fresh AlF3, LiF, and N,N-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxdiimide (EP-PTCDI) evaporated in situ on self-supported C or Ag foils, covering the very low energy range from 25 keV down to 0.7 keV. The transmission method is used in combination with time-of-flight (TOF) spectrometry. In the case of fluorides with large band gap energies (AlF3 and LiF), the experimental stopping power increases almost linearly with the mean projectile velocity showing a velocity threshold at about 0.1 a.u. These features are well reproduced by a model based on quantum scattering theory that takes into account the velocity distribution and the excitation of the active 2p electrons in the F anions, and the properties of the electronic bands of the insulators. In the case of the semiconductor organic film with a lower gap, the experimental stopping power increases linearly with the mean projectile velocity without presenting a clear threshold. This trend is also reproduced by the proposed model.

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  • Received 16 November 2009

DOI:https://doi.org/10.1103/PhysRevA.81.022902

©2010 American Physical Society

Authors & Affiliations

L. N. Serkovic Loli*, E. A. Sánchez, O. Grizzi, and N. R. Arista

  • Centro Atómico Bariloche—CNEA, Instituto Balseiro–UNCuyo, CONICET 8400 S. C. de Bariloche, Río Negro, Argentina

  • *serkovic@cab.cnea.gov.ar

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Vol. 81, Iss. 2 — February 2010

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