Strains Induced by Point Defects in Graphene on a Metal

Nils Blanc, Fabien Jean, Arkady V. Krasheninnikov, Gilles Renaud, and Johann Coraux
Phys. Rev. Lett. 111, 085501 – Published 20 August 2013
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Abstract

Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high-energy electron diffraction experiments with first-principles calculations, we show that large strains, above 2%, are present in graphene during its growth by chemical vapor deposition on Ir(111) and when it is subjected to oxygen etching and ion bombardment. Our results unravel the microscopic relationship between point defects and strains in epitaxial graphene and suggest new avenues for graphene nanostructuring and engineering its properties through introduction of defects and intercalation of atoms and molecules between graphene and its metal substrate.

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  • Received 13 February 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.085501

© 2013 American Physical Society

Authors & Affiliations

Nils Blanc1,2, Fabien Jean1, Arkady V. Krasheninnikov3, Gilles Renaud2, and Johann Coraux1,*

  • 1Institut NÉEL, CNRS and Université Joseph Fourier, BP166, F-38042 Grenoble Cedex 9, France
  • 2CEA-UJF, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
  • 3Department of Applied Physics, Aalto University, Post Office Box 11100, Aalto FI-00076, Finland and Department of Physics, University of Helsinki, Post Office Box 43, Helsinki FI-00014, Finland

  • *johann.coraux@grenoble.cnrs.fr

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Issue

Vol. 111, Iss. 8 — 23 August 2013

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