Abstract
P-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm−3 and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm−2s−1 was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.
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The authors acknowledges financial supported by Deutsche Forschungsgemeinschaft (DFG) under project number As 107/1-3 and FAPESP- Brazil.
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As, D.J., Pacheco-Salazar, D.G., Potthast, S. et al. Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess. MRS Online Proceedings Library 798, 725–730 (2003). https://doi.org/10.1557/PROC-798-Y8.2
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DOI: https://doi.org/10.1557/PROC-798-Y8.2