Beta to alpha transition and defects on SiC on Si grown by CVD

Morales, F M; Förster, Ch; Ambacher, O; Pezoldt, J

doi:10.1007/3-540-31915-8_25

F M Morales³,
Ch Förster³,
O Ambacher³ &
…
J Pezoldt³

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

The features of α-SiC (0001) epitaxially grown on top of β-SiC(l11)/Si(111) is reported by means of transmission electron microscopy (TEM). Hexagonal and rhombohedral polytype nuclei, mainly 4H-SiC, appear after the growth of a fixed cubic SiC thickness which is related to the selected growth conditions: Si/C ratio and growth temperature. The defect structure of these multilayer systems (voids, planar defects, facets and polycrystalline top clusters) and the hexagonality of the SiC surface are determined and described.

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Authors and Affiliations

Department of Nanotechnology, Centre for Micro- and Nanotechnology (ZMN), TU-Ilmenau, Gustav-Kirchhoff-Strasse 7, D-98693, Ilmenau, Germany
F M Morales, Ch Förster, O Ambacher & J Pezoldt

Authors

F M Morales
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Ch Förster
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O Ambacher
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J Pezoldt
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Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
J. L. Hutchison

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Morales, F.M., Förster, C., Ambacher, O., Pezoldt, J. (2005). Beta to alpha transition and defects on SiC on Si grown by CVD. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_25

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DOI: https://doi.org/10.1007/3-540-31915-8_25
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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