Authors:
- Provides extensive analytical formulations for design and analysis of structures
- Includes numerical simulation examples to elucidate the operating physics and validate the models
- Analyzes device performance attributes to allow practicing engineers in the industry to develop products
- Presents a cohesive treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field
- Includes supplementary material: sn.pub/extras
Buy it now
Buying options
Tax calculation will be finalised at checkout
Other ways to access
This is a preview of subscription content, log in via an institution to check for access.
Table of contents (10 chapters)
-
Front Matter
-
Back Matter
About this book
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devices and includes the unique attributes and design requirements for emerging silicon carbide devices.
Authors and Affiliations
-
Power Semiconductor Research Center, North Carolina State University, Raleigh, U.S.A.
B. Jayant Baliga
Bibliographic Information
Book Title: Fundamentals of Power Semiconductor Devices
Authors: B. Jayant Baliga
DOI: https://doi.org/10.1007/978-0-387-47314-7
Publisher: Springer New York, NY
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer-Verlag US 2008
Softcover ISBN: 978-1-4899-7765-6Published: 23 August 2016
eBook ISBN: 978-0-387-47314-7Published: 02 April 2010
Edition Number: 1
Number of Pages: XXIII, 1069
Topics: Electronics and Microelectronics, Instrumentation, Energy Systems, Circuits and Systems, Solid State Physics, Spectroscopy and Microscopy, Energy, general