Summary
Heat is generated in a thyristor when it is in either the blocking or the conducting mode. In the first case, the heat generation takes place primarily at the reverse-biased blocking junction. For the case of forward conduction, it is customary to assume (for simplification) that the heat is generated in the thyristor in the plane passing through the device center and parallel to the center junction.
The maximum allowable thyristor dissipation is determined by the maximum permissible junction temperature and the device’s thermal resistance. A generalized thermal impedance concept has been introduced in order to establish maximum dissipation limits during such transient conditions as the turn on, turn off, and current surges.
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References
F. E. Gentry, F. W. Gutzwiller, N. Holonyak, Jr., and E. E. Von Zastrow. Semiconductor Controlled Rectifiers. Englewood Cliffs, N.J.: Prentice-Hall, 1964.
F. E. Gentry. Forward current surge failure in semiconductor rectifiers. AIEE Trans., 77 (1): 746–750, 1958.
V. I. Stafeev. Injection heat transfer. Soviet Phys.—Solid State, 2: 406–412, 1960.
W. M. Bullis. Minority carrier thermoelectric cooling. J. Appl. Phys., 34(6): 1648–1649,1963.
R. N. Hall. An analysis of the performance of thermoelectric devices made from long lifetime semiconductors. Solid State Electron., 2: 115–122, 1961.
RCA Solid State Power Circuits Technical Series, SP-52. RCA Solid State Division, Somerville, N.J., 1971.
General Electric SCR Manual, 5th ed., Syracuse, N.Y.: General Electric, 1972.
J. LePonner and J. M. Peter. Resistance et impedance thermique des triacs. Rev. Gen. d’Electricité, 81 (11): 711–719, 1972.
J. Neilson. RCA Solid State Division, private communication, 1972.
W. E. Newell. Dissipation in solid state devices—The magic of I 1+N PESC Record, 1974, pp. 162–173.
D. Baker and W. O. Fleckenst. In Physical Design of Electronic Systems (D. C. Koehler, C. E. Roden, and R. Sabis, eds.). Bell Telephone Laboratories, Design Technology Vol. 1. Englewood Cliffs, N.J.: Prentice-Hall, 1970.
F. W. Gutzwilier and T. P. Sylvan. Power semiconductor ratings under transient and intermittent loads. Trans. AIEE, 79: 699–706, 1960.
S. Goldman. Transformation Calculus and Electrical Transients. Englewood Cliffs, N.J.: Prentice-Hall, 1949.
Hua Quen Tserng and Hubert R. Plumlee. The forward voltage technique to measure junction temperatures of ac operating triacs. IEEE Trans Electron Devices, ED-17 (9): 755–761, 1970.
Hua Quen Tserng and Hubert R. Plumlee. Temperature measurements of AC operating triac using a gate trigger current technique. IEEE Trans. Electron Devices, ED-17 (9): 761–765, 1970.
F. T. Wenthen. Computer-aided thermal analysis of power semiconductor devices. IEEE Trans. Electron Devices, ED-17 (9): 765–770, 1970.
G. Liebman. The solution of transient heat flow and heat transfer problems by relaxation. Br. J. Appl. Phys., 6: 129–135, 1955.
W. H. Parker. Computed transient temperatures for silicon diodes. RCA-Electronic Components, Lancaster, Internal Report, April 1972.
Also of interest
W. E. Newell. Transient thermal analysis of solid state power devices— Making a dreaded process easy. PESC Record, 1975, pp. 761–770.
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© 1976 Springer-Verlag New York Inc.
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Blicher, A. (1976). Thyristor thermal response. In: Thyristor Physics. Applied Physics and Engineering, vol 12. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-9877-9_16
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DOI: https://doi.org/10.1007/978-1-4612-9877-9_16
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