Abstract
In this paper, we present new methods and results related to the characterization of silicon on insulator material fabricated by deep oxygen implantation (SIMOX). The minority carrier lifetime as well as the surface recombination velocity are obtained using depletion-mode MOSFETs. This is done by monitoring the drain current while the gate is being pulsed into deep depletion.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
H. Haddara, G. Ghibaudo, Europhy. Conf. Abstracts 10G, 47, ESSDERC’86, Cambridge, UK.
E. Nicollian, J. Brews, in “MOS Physics and Technology”, Wiley, New York (1982).
M. Zerbst, Z. Angew. Phys., 22:30 (1966).
J.H. Lee, S. Cristoloveanu, IEEE Elect. Dev. Lett., EDL-7:537 (1986).
D.P. Vu, J.C. Pfister, Appl. Phys. Lett., 9:951 (1985).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1988 Plenum Press, New York
About this chapter
Cite this chapter
Elewa, T., Haddara, H., Cristoloveanu, S. (1988). Interface Properties and Recombination Mechanisms in Simox Structures. In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_67
Download citation
DOI: https://doi.org/10.1007/978-1-4613-1031-0_67
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-8301-0
Online ISBN: 978-1-4613-1031-0
eBook Packages: Springer Book Archive