Modeling the Driving-Point Characteristic of Resistive Interconnect for Accurate Delay Estimation

Abstract

In recent years, on-chip interconnect has had an increasingly important impact on overall system performance. Much work has been done to develop algorithms which can efficiently and accurately predict delay through on-chip interconnect. These algorithms compute a reduced-order approximation (usually based on the “Elmore delay”) for voltage-transfer ratios (from source to loads) in an RC-tree model for the interconnect. However, much less emphasis has been placed on accurately approximating the driving-point characteristic at the root of an RC-tree. A good driving-point approximation is needed to accurately predict how delay through a gate is influenced by the interconnect which that gate must drive. Macromodels for on-chip gates typically consider only total capacitance of the driven interconnect, completely ignoring series resistance. In this paper, we present an efficient algorithm which accounts for series resistance by computing a reduced-order approximation for the driving-point admittance of an RC-tree. Using an ECL clock buffer as an example, we demonstrate a significant improvement in accuracy.