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Physical Aspects of Cell Operation and Reliability

  • Chapter
Flash Memories

Abstract

This chapter overviews the basic physical effects involved in programming and erasing of Flash memory cells, to provide the background for a deeper understanding of their operation and reliability. In particular, tunneling and high field transport are treated and the associated phenomena in MOS-FETs and Flash cells are described by means of measurements and simulations. Device degradation induced by charge injection into thin silicon dioxide layers is also briefly discussed.

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  1. Dipartimento di Ingegneria Elettrica, Università di Udine, Via delle Scienze 208, 33100, Udine, Italy

    Luca Selmi

  2. Dipartimento di Ingegneria, Università di Ferrara, Via Saragat 1, 44100, Ferrara, Italy

    Claudio Fiegna

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Selmi, L., Fiegna, C. (1999). Physical Aspects of Cell Operation and Reliability. In: Flash Memories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5015-0_4

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