Abstract
Optical properties of amorphous silicon (a-Si) depend strongly on preparation techniques and conditions. Structural studies suggested that a-Si films contain microvoids on the order of 5–10 Å [1]. These structural defects give rise to a large density of states in the gap of the semiconductor. It has, however, been found [2] that hydrogen incorporation reduces the density of defect states by orders of magnitude with corresponding changes in the optical, transport, and recombination properties. Hydrogen incorporation has been found to have quite dramatic effects in amorphous Si, i.e., it makes possible to obtain n- and P-type materials and thus pn junctions [3,4]. Since then, hydrogenated amorphous Si (a-Si:H) has received much attention as a promising material for wider application to electronic devices, such as low-cost solar cells, thin film transistors, and imaging devices [5].
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Adachi, S. (1999). a-Silicon (a-Si). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_63
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_63
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