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Microlithography with Soft X Rays

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Synchrotron Radiation Research

Abstract

The use of soft x rays as a practical means of replicating patterns in the fabrication of electronic and optical microdevices was suggested by Spears and Smith(1, 2) in 1972. The approach is similar to contact x-ray microscopy, which has been used for several decades (see Chapter 8). Typically, x-ray wavelengths from 0.4 to 8.0 nm are used to proximity print Au mask patterns supported by thin transparent substrates with 0.1-µm resolution. X-ray lithography is an important alternative to optical lithography because it overcomes the fundamental limitations of diffraction and of shallow depth of field. Although x-ray replication is itself dependent on electron beam lithography for generating masks, it has inherently higher resolution for making device features. More importantly, it is a parallel rather than a serial exposure process, which tends to make it much more cost effective effective than direct electron beam wafer writing. In fact from an economic point of view, x-ray lithography is potentially competitive with optical lithography for fabricating electronic devices with 1.0-µm features. At 0.5-µm feature sizes x-ray lithography may be the only viable approach that has a throughput on the order of one wafer per minute. X-ray lithography systems intended to meet these micron and submicron volume production goals are being developed commercially.

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  1. Department of Electrical Engineering and Computer Sciences and Electronics Research Laboratory, University of California at Berkeley, Berkeley, California, USA

    Andrew R. Neureuther

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  1. Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Bin 69, P.O. Box 4349, 94305, Stanford, California, USA

    Herman Winick

  2. Department of Applied Physics, Stanford University, 94305, Stanford, California, USA

    S. Doniach

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Neureuther, A.R. (1980). Microlithography with Soft X Rays. In: Winick, H., Doniach, S. (eds) Synchrotron Radiation Research. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7998-4_7

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