Abstract
Range distributions of 5–150 keV boron ions in silicon dioxide have been measured by means of secondary ion mass spectrometry. Mean projected ranges are in good agreement with predictions of the LSS theory (maximum deviation 10%). Experimental range straggling values are more than 20% larger than predicted. Moreover the distributions show pronounced deviations from a Gaussian. Comparison with boron range in amorphous silicon indicates 10 to 15% larger mean projected ranges in silicon dioxide. Amorphous oxide layers on single crystal silicon do not prevent the occurrence of channelling tails in the substrate.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
Proc. Third Int. Conf. Ion Implantation in Semiconductors and Other Materials, éd. by B.L. Crowder, Plenum Press, New York (1973).
W.K. Chu, B.L. Crowder, J.W. Mayer, and J.F. Ziegler, in Proc. Third Int. Conf. Ion Implantation in Semiconductors and Other Materials, éd. by B.L. Crowder, Plenum Press, New York (1973), p. 225.
W.K. Chu, B.L. Crowder, J.W. Mayer, and J.F. Ziegler, Appl. Phys. Lett. 22 (1973) 490.
V.G. Volod’ko, E.I. Zorin, P.V. Pavlov, and D.I. Tetel’baum, Soviet Physics-Solid State 10 (1969) 828.
J.L. Combasson, J. Bernard, G. Guernet, N. Hilleret, and M. Bruel, in Proc. Third Int. Conf. Ion Implantation in Semiconductors and Other Materials, éd. by B.L. Crowder, Plenum Press, New York (1973), p. 285.
J. Maul, F. Schulz, and K. Wittmaack, Adv. Mass Spectrometry VI (1974) 493.
K. Wittmaack, J. Maul, and F. Schulz, Proc. Sixth Int. Conf. Electron and Ion Beam Science and Technology, in press.
K. Wittmaack, submitted to Int. J. Mass Spectrom. Ion Phys.
W. Przyborski, J. Roed, J. Lippert, and L. Sarhold-Kristensen, Rad. Effects 1 (1969) 33.
A.S. Grove, Physics and Technology of Semiconductor Devices, J. Wiley, New York (1967).
M.G. Kendall and A. Stuart, The Advanced Theory of Statistics, Vol. 1, C. Griffin & Co., London (1958).
K. Wittmaack and F. Schulz, to be published.
K. Wittmaack, J. Maul, and F. Schulz, in Proc. Third Int. Conf. Ion Implantation in Semiconductors and Other Materials, éd. by B.L. Crowder, Plenum Press, New York (1973), p. 119.
K. Wittmaack, F. Schulz, and J. Maul, Phys. Letters 43A (1973) 477.
W.S. Johnson and J.F. Gibbons, Projected Range Statistics in Semiconductors, distr. by Stanford University Bookstore (1969).
J. Lindhard, M. Scharff, and H.E. Schiott, Mat. Fys. Medd. Dan. Vid. Selsk. 33, No. 14 (1963).
S. Furukawa, H. Matsumura, and H. Ishiwara, Proc. US-Japan Seminar on Ion Implantation in Semiconductors, ed. by S. Namba, Jap. Soc. Promotion Sci. (1972) p. 73.
D.K. Brice, Rad. Effects 11 (1971) 227.
S. Mylroie and J.F. Gibbons, in Proc. Third Int. Conf. Ion Implantation in Semiconductors and Other Materials, éd. by B.L. Crowder, Plenum Press, New York (1973), p. 243.
K.B. Winterbon, private communication.
S. Schwabe and R. Stolle, Phys. Stat. Sol.(b) 47 (1971) 111.
J.A. Davies, G.C. Ball, F. Brown, and B. Dorney, Canad. J. Phys. 42 (1964) 1070.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1975 Plenum Press, New York
About this chapter
Cite this chapter
Wittmaack, K., Schulz, F., Hietel, B. (1975). Range Distributions of Boron in Silicon Dioxide and the Underlying Silicon Substrate. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_25
Download citation
DOI: https://doi.org/10.1007/978-1-4684-2151-4_25
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2153-8
Online ISBN: 978-1-4684-2151-4
eBook Packages: Springer Book Archive