Abstract
Ultrasonic testing is a promising NDE technique for ceramic structural components. The lifetime of such components is controlled by defects and flaws. The critical flaw sizes for high performance ceramics are 25 µm and to detect such small flaws, the frequency of the transducers has to be >30 MHz [1–4]. Such transducers are usually made from ZnO, LiNbO3, LMN composites [5], and PVDF piezoelectric materials However there are no reports of aluminium nitride (AIN) films being used for such applications In this paper the piezoelectric and dielectric properties of A1N films and their application to high frequency devices are discussed and compared with the conventional materials.
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References
N.D. Patel, J. Van Den Andel and P.S. Nicholson, Review of Progress in Quantitative Nondestructive Evaluation, Vol 7A, D.O.Thompson and D. E. Chimenti (Plenum Press, New York), pp 662, 1988.
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N.D. Patel, P.H. Boldt and P.S. Nicholson, Submitted to Thick and Thin Film Symposium, The American Ceramic Society, 1989.
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Patel, N.D., Fulford, S.X., Nicholson, P.S. (1990). High Frequency-High Temperature Ultrasonic Transducers. In: Thompson, D.O., Chimenti, D.E. (eds) Review of Progress in Quantitative Nondestructive Evaluation. Review of Progress in Quantitative Nondestructive Evaluation. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5772-8_104
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DOI: https://doi.org/10.1007/978-1-4684-5772-8_104
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