Summary
In this paper all aspects of the design and analysis of high-power rectifiers are presented. In the first section, the results of a study are given which identify the limiting physical mechanisms affecting forward drop in power rectifiers. In the second section, the effect of packaging variations on surge and steady-state device ratings is investigated. In the third section, the effect that gold, platinum, and electron irradiation have on the switching speed, forward drop and “snappiness” of power rectifiers is analyzed using a method to directly measure the free-carrier concentration while the device is switching. Device analysis, wherever presented, is made using an exact numerical model in one dimension which allows for temperature- and time-dependent calculations on devices imbedded in inductive switching circuits.
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References
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© 1982 Plenum Press, New York
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Adler, M.S., Temple, V.A.K. (1982). Analysis and Design of High-Power Rectifiers. In: Sittig, R., Roggwiller, P. (eds) Semiconductor Devices for Power Conditioning. Earlier Brown Boveri Symposia. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7263-9_9
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DOI: https://doi.org/10.1007/978-1-4684-7263-9_9
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