Abstract
Current transient spectroscopy (OTCS) is known to be able to give the electrical characteristics of the traps in semi-insulating material, as classic DLTS is in n- or p-type semiconductors. The method is limited by difficulties occurring for very deep traps. We explain here the difficulties — mainly the occurrence of negative transients — and set up an experimental procedure to interpret the data. Our first results show that, in Bridgman GaAs:Cr, the HL1 and EL2 levels are not the only levels that are present. At comparable concentration, the HL1 trap can be detected but the EL2 trap cannot.
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References
Hurtes, C., Boulou, A., Mitonneau, A. and Bois, D. (1978). Appl. Phys. Lett., 32, 821
Martin, G.M. and Bois, D. (1978). Conf. on Characterization Techniques for Semiconductor Materials and Devices, Seattle, 78, 32
Sah, C.T., Forbes, L., Rosier, L.L. and Tasch, A.F. (1970). Solid St. Electron., 13, 759
Martin, G.M., Mitonneau, A., Pons, D., Mircea, A. and Woodard, D.W. (1980). To be published in J. Phys. C.: Solid St. Phys.
Mitonneau, A., Mircea, A., Martin, G.M. and Pons, D. (1979). Rev. Phys. Appl., 14, 853
Bois, D., Chantre, A., Vincent, G. and Nouaillhat, A. (1978). Inst. Phys. Conf. Ser., 43, 295
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© 1980 B. Deveaud and B. Toulouse
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Deveaud, B., Toulouse, B. (1980). Observation of Very Deep Levels by Optical DLTS. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_30
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_30
Publisher Name: Birkhäuser Boston
Print ISBN: 978-1-4684-9195-1
Online ISBN: 978-1-4684-9193-7
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