Abstract
The hydrodynamic model treats electron flow in a semiconductor device through the Euler equations of gas dynamics, with the addition of a heat conduction term. Thus the hydrodynamic model PDEs have hyperbolic, parabolic, and elliptic modes.
The nonlinear hyperbolic modes support shock waves. Numerical sim-ulations of a steady-state electron shock wave in a semiconductor device are presented, using steady-state second upwind and high-order time-dependent upwind methods. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with a 1 volt bias) at 300 K for a 0.1 micron channel and at 77 K for a 1.0 micron channel.
Research supported in part by NSF grant DMS-8811863.
Research supported in part by NSF grant DMS-8905872 and by the Microelectronics Center of North Carolina.
Research supported in part by NSF grant DMS-8721742.
Research supported in part by NSF grant DMS-8811863, ONR grant N00014-86-K-0691, NASA grant NAG1-270.
Research supported in part by ONR grant N00014-85-K-0487 and by the Microelectronics Center of North Carolina.
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References
C. L. Gardner, J. W. Jerome, and D. J. Rose, “Numerical methods for the hydrodynamic device model: Subsonic flow,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 8, pp. 501–507, 1989.
C. L. Gardner, “Numerical simulation of a steady-state electron shock wave in a submicron semiconductor device,” to appear.
K. Blotekjaer, “Transport equations for electrons in two-valley semiconductors,” IEEE Transactions on Electron Devices, vol. ED-17, pp. 38–47, 1970.
G. Baccarani and M. R. Wordeman, “An investigation of steady-state velocity overshoot effects in Si and GaAs devices,” Solid State Electronics, vol. 28, pp. 407–416, 1985.
C. L. Gardner, P. J. Lanzkron, and D. J. Rose, “A parallel nonlinear block iterative method for the hydrodynamic device model,” to appear.
E. Fatemi, J. W. Jerome, and S. Osher, “Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, to appear.
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© 1991 Springer Science+Business Media New York
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Fatemi, E., Gardner, C.L., Jerome, J.W., Osher, S., Rose, D.J. (1991). Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_4
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DOI: https://doi.org/10.1007/978-1-4757-2124-9_4
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