Abstract
Most semiconductor devices contain at least one junction between p-type and n-type material. P—n junction theory serves as the foundation of the physics of semiconductor devices. The basic theory of current—voltage characteristics of p—n junctions was established by Shockley (1949). This theory was then expanded by Sah et al. (1957) and Moll (1958).
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© 1998 Springer Science+Business Media New York
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Yuan, J.S., Liou, J.J. (1998). P—N Junction. In: Semiconductor Device Physics and Simulation. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1904-5_2
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DOI: https://doi.org/10.1007/978-1-4899-1904-5_2
Publisher Name: Springer, Boston, MA
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Online ISBN: 978-1-4899-1904-5
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