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Field-Effect Transistors 1

Introduction of Early Transistor Developments for Power Switching and RF Applications

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

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Abstract

In this chapter, we describe the early development of gallium oxide transistors that led to the most common gallium oxide device: n-type, depletion-mode, metal insulator semiconductor field effect transistor . We relate the enticing material properties of gallium oxide described in earlier chapters to the requirements in design and fabrication of marketable devices for low-loss power switching and radio frequency applications. A route for device optimization is shown by maximizing electric field in the drift region while reducing parasitic resistance. We analyze the developments that will be required to overcome device-related technical barriers such as achieving low contact resistance, reducing effects of self-heating, and increasing device gain. The chapter concludes with recent research and goals for gallium oxide transistors moving forward with subsequent chapters detailing these topics.

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Author information

Authors and Affiliations

  1. Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, OH, 45433, USA

    Neil Moser, Andrew Green, Kelson Chabak & Gregg Jessen

  2. Air Force Research Laboratory, Materials and Manufacturing Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, OH, 45433, USA

    Eric Heller

Authors
  1. Neil Moser
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  2. Andrew Green
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  3. Kelson Chabak
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  4. Eric Heller
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  5. Gregg Jessen
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Corresponding author

Correspondence to Gregg Jessen .

Editor information

Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Moser, N., Green, A., Chabak, K., Heller, E., Jessen, G. (2020). Field-Effect Transistors 1. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_31

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