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Nanoelectronic Devices Enriching Moore’s Law

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Atomic-Scale Electronics Beyond CMOS

Abstract

This chapter is focused on nanoelectronic devices developed in the last years as the result of searching for alternative developments of the Moore’s law. We deal in this chapter with ballistic devices, negative capacitance FETs, hyper FETs, tunneling devices, phase change devices, quantum dots and memories. Many of them have in common the fact that quantum mechanics is at the foundation of their functionalities, i.e., they are quantum devices.

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  1. National Research and Development Institute in Microtechnology, Voluntari, Romania

    Mircea Dragoman

  2. Faculty of Physics, University of Bucharest, Magurele, Romania

    Daniela Dragoman

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Dragoman, M., Dragoman, D. (2021). Nanoelectronic Devices Enriching Moore’s Law. In: Atomic-Scale Electronics Beyond CMOS. Springer, Cham. https://doi.org/10.1007/978-3-030-60563-6_3

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