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Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors

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Advanced Materials for Radiation Detection

Abstract

While CdZnTe (CZT) is one of the best materials for room-temperature radiation detection, they are not quite suitable for high-temperature or harsh-environment applications. This chapter discusses the fabrication and characterization of high-resolution 4H-SiC epitaxial detectors, which are appropriate for use in harsh environments like high temperature, chemically reactive and corrosive environments, and most importantly high-dose nuclear radiation environments. Schottky barrier diodes on thin (≤20 μm) 4H-SiC epitaxial layer detectors have been found to be a very promising device for charged particle detection at room and elevated temperatures. While such thin epitaxial layers are sufficient to stop energetic charged particle like alpha particles, highly penetrating radiations such as X- and γ-rays need thicker epitaxial layers to enable substantial photon absorption. This chapter discusses the fabrication of Schottky barrier radiation detectors in n-type 4H-SiC epitaxial layers with different thicknesses (20, 50, and 150 μm); their characterization in terms of alpha, X-rays, and γ-detection; and evaluation of the factors like deep-level defects which regulate their performance as radiation detectors.

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Acknowledgments

The authors acknowledge financial support provided by the DOE Office of Nuclear Energy’s Nuclear Energy University Programs (NEUP), Grant No. DE-NE0008662, and by Los Alamos National Laboratory/DOE (Grant No. 143479). The work was also partially supported by the Advanced Support Program for Innovative Research Excellence-I (ASPIRE-I) of the University of South Carolina (UofSC), Columbia, Grant No. 15530-E404.

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    Sandeep K. Chaudhuri & Krishna C. Mandal

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Chaudhuri, S.K., Mandal, K.C. (2022). Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors. In: Iniewski, K.(. (eds) Advanced Materials for Radiation Detection. Springer, Cham. https://doi.org/10.1007/978-3-030-76461-6_9

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