Abstract
In this work we present a study of the combined effects of the variation of process parameters and geometry in a 65 nm technology through consistent three-dimensional TCAD process and device simulations. Channel lengths and widths together with two critical process parameters obtained through a screening experiment are examined in a 3-level full-factorial design of experiments. The results show an increased impact of process variations for short and narrow structures.
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© 2007 Springer-Verlag Wien
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Sponton, L., Bomholt, L., Fichtner, W. (2007). Analysis of Process-Geometry Modulations through 3D TCAD. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_93
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DOI: https://doi.org/10.1007/978-3-211-72861-1_93
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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