Abstract
The porosity (void fraction per unit volume) of silicon has been varied from less than 1 % to as high as 97 % using electrochemical etching of solid silicon with supercritical drying or silica aerogel reduction with supercritical drying. Fifteen techniques are identified for quantifying porosity in specific physical forms, and a conversion table is provided between porosity, pore volume (void content per unit weight), and bulk density in air. Finally ten applications are given which exploit medium to high (25–95 %) porosity, or the ability to vary porosity significantly within a given structure.
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Canham, L. (2014). Pore Volume (Porosity) in Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-04508-5_13-1
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DOI: https://doi.org/10.1007/978-3-319-04508-5_13-1
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