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The EP from Quantum Wells (QWs) of Heavily Doped (HD) Non-parabolic Semiconductors

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Einstein's Photoemission

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 262))

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Abstract

This chapter explores the EP from QWs of HD nonlinear optical semiconductors based on a newly formulated electron dispersion relation considering all types of anisotropies of the energy band spectrum within the framework of k.p formalism in the presence of Gaussian band tails. We have also investigated the EP from QWs of HD III-V, II-VI, IV-VI, stressed Kane type semiconductors, Te, GaP, PtSb2, Bi2Te3, Ge and GaSb on the basis of newly derived respective E-k relation under heavy doping. We observe that the EP increases with increasing surface electron concentration and decreasing film thickness in spikey manners, which is the characteristic feature of such 2D structures and the numerical values are totally band structure dependent. The EP increases with increasing photo energy in a step-like fashion for all the cases. The analyses for bulk HD materials have also been performed for the purpose of relative comparison. The most striking features are that the presence of poles in the dispersion relation of the materials in the absence of band tail creates the complex energy spectrum in the corresponding HD samples and effective electron mass exists within the band gap which is impossible without the concept of band tails. The Sect. 1.4 contains 22 open research problems, which form the integral part of chapter one of this book.

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    Kamakhya Prasad Ghatak

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Ghatak, K.P. (2015). The EP from Quantum Wells (QWs) of Heavily Doped (HD) Non-parabolic Semiconductors. In: Einstein's Photoemission. Springer Tracts in Modern Physics, vol 262. Springer, Cham. https://doi.org/10.1007/978-3-319-11188-9_1

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