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Drying Techniques Applied to Porous Silicon

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Handbook of Porous Silicon

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Abstract

Wet-etched mesoporous silicon is normally dried in the air, but this limits the range of porosities and surface areas achievable, due to capillary force-induced collapse of the silicon skeleton. This updated review discusses the various alternative drying techniques with particular attention paid to supercritical/critical point drying, a powerful technique applicable to all physical forms of porous silicon. Optimized etching and supercritical drying conditions have recently led to the achievement of silicon powder surface areas up to 1125m2/g from anodized p− wafers and pore volumes up to 4.66 ml/g from anodized p + wafers. Supercritical drying has also been used to minimize “bundling” of porous silicon nanowires in closely spaced arrays.

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Authors and Affiliations

  1. School of Physics and Astronomy, University of Birmingham, Edgbaston, B15 2TT, Birmingham, Worcestershire, UK

    Leigh Canham

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  1. School of Physics and Astronomy, University of Birmingham, Birmingham, Worcestershire, United Kingdom

    Leigh Canham

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Canham, L. (2018). Drying Techniques Applied to Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-71381-6_57

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