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Homoepitaxy of GaN Light-Emitting Diodes

  • Chapter
Light-Emitting Diodes

Part of the book series: Solid State Lighting Technology and Application Series ((SSLTA,volume 4))

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Abstract

Light-emitting diodes (LEDs) employing heterostructures of group-III nitrides are a prime contender for the realization of energy-efficient solid-state lighting (US Department of Energy, Solid-State Lighting Program, http://www.netl.doe.gov/ssl; Basic Research Needs or Solid-State Lighting, Report of the Basic Energy Sciences Workshop on Solid-State Lighting, May 22–24, 2006. www.sc.doe.gov/bes/reports/files/SSL_rpt.Pdf). As a direct bandgap material, alloys of GaxInxN can be tuned to emit light covering every portion of the visible spectrum. White light of good color-rendering quality (additive white) requires a more or less continuous spectrum and can be obtained by the combination of various such light sources. On the other hand, image information encoded in red-green-blue (RGB) colors can be reproduced by three highly monochromatic light sources of red, green, and blue. Current best practices in LED lighting employ blue or near-UV LEDs to excite a phosphor that downconverts those photons into longer wavelength light dependent on the phosphor chemistry and composition. The more efficient approach employs LEDs that emit directly at the target wavelength and thereby bypass the energy loss of downconversion. Even in the ideal case of 100% quantum efficiency, this downconversion from the blue to the green amounts to a 20% energy loss. Of particular interest therefore are high efficiency LEDs in the green (525 nm) and deep green (555 nm) spectral region.

Current technology primarily employs heteroepitaxial metalorganic vapor phase epitaxy (MOVPE) of AlGaInN alloys on dissimilar substrates like sapphire or SiC resulting in high densities of threading dislocations. In heteroepitaxial GaN, threading dislocations as high as 109–1011 cm2 are commonplace (Ponce et al., Appl Phys Lett 69:770, 1996) unless specialized multistep regrowth methods are being applied (Usui et al., Jpn J Appl Phys 36: L899, 1997; Nam et al., Appl Phys Lett 71:2638, 1997; Iwaya et al., Jpn J Appl Phys 37:L316, 1998). This typically results in high densities of threading dislocations that are extremely difficult to prevent from penetrating the active quantum well (QW) region. The considered roles of those defects range from electrically active donor centers (Leung et al., Appl Phys Lett 74:2495, 1999), highly active non-radiative recombination centers (Rosner et al., Appl Phys Lett 70:420, 1997), over mid-gap trap states assisting charge tunneling (Monemar and Sernelius, Appl Phys Lett 91:181103, 2007), and seeds for V-defects (Wu et al., Appl Phys Lett 72:692, 1998; Wetzel et al., Appl Phys Lett 85:866, 2004), to pathways of metal impurity electromigration and acceptor diffusion.

Promising therefore are freestanding GaN templates or bulk wafers that can be grown by hydride vapor phase epitaxy with a low threading-dislocation densities typically in the mid 106 cm2 (Hanser et al., Proceedings of the CS MANTECH Conference, April 24–27, Vancouver, British Columbia,Canada, 2006) or lower. Large area substrates for homoepitaxial growth of GaN layers have recently become available as a result of recent progress in production of thick freestanding GaN (FS-GaN) layers grown by hydride vapor-phase epitaxy (HVPE) (Kelly et al., Jpn J Appl Phys 38:L217–L219, 1999; Jasinski et al., Appl Phys Lett 78:2297–2299, 2001; Chao et al., Appl Phys Lett 95:051905–051905-3, 2009). Such substrates have been successfully applied to grow LED structures using metal-organic chemical vapor deposition (MOCVD) (Miskys et al., Appl Phys Lett 77:1858–1860, 2000), resulting in high-quality films, as demonstrated by their superior optical and electrical characteristics.

In this chapter, we discuss the progress in growth of bulk GaN by HVPE; the main challenges and solutions of HVPE growth method, including dislocation reduction, strain control, and doping of GaN; structural characterization, electrical characterization, and optical characterization of homoepitaxial InGaN/GaN light-emitting diodes; efficiency droop and efficiency enhancement; and light efficiency extraction of homoepitaxial InGaN/GaN light-emitting diodes. Meanwhile, nonpolar and semipolar orientations GaN LED grown on bulk GaN substrates also have been investigated.

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  1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China

    Ke Xu, Miao Wang, Taofei Zhou & Jianfeng Wang

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  1. Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Solid State Lighting R&D Center, Beijing, China

    Jinmin Li

  2. Delft University of Technology, DELFT, Noord-Brabant, The Netherlands

    G. Q. Zhang

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Xu, K., Wang, M., Zhou, T., Wang, J. (2019). Homoepitaxy of GaN Light-Emitting Diodes. In: Li, J., Zhang, G.Q. (eds) Light-Emitting Diodes. Solid State Lighting Technology and Application Series, vol 4. Springer, Cham. https://doi.org/10.1007/978-3-319-99211-2_3

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