Abstract
In the production of large scale integrated semiconductor circuits, and especially of semiconductor memories with high storage capacity, the deviations from the intended ideal state, i.e. the failures, are very important, as their nature and concentration determine the number of individual devices (transistors) and individual functions (storage elements) that can be combined as an integrated circuit (IC) on a single monocristalline substrate. The special dependences are characterized by the facts that with increasing integration the relation between perfect integrated circuits (i.e. without failures) and the total number of produced integrated circuits decreases, and, furthermore, that the achieved quality standard and the failure level determine the scale of integration at which the minimum cost can be achieved. Finally, the quality standard of the factory determines the reliability in a high degree, i.e. the frequency with which the integrated circuits installed in the electronic equipment fail in operation.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
W. Hilberg, Elektronische digitale Speicher, Oldenbourg Verlag, München, 1975.
W. Hilberg, Grundlagen der Digitaltechnik II, Vorlesung TH Darmstadt SS 1976.
B. T. Murphy, Cost-Size Optima of Monolithic Integrated Circuits, Proc. IEEE, Dec. 1964, pp 1537–1545.
B. Höfflinger, Praxis der rechnerunterstützten Großgration mit MOS-Schalungen, Seminar Universitänd, 4–8. Okt. 1976.
K. Garbrecht and K.-U. Stein, Perspectives and Limitations of Large-Scale Integration, Siemens Forsch, u. Entwickl.-Ber. Bd. 5, Nr. 6, 312–318 (1976).
IEEE Standard Dictionary of Electrical and Electronics Terms, IEEE Std. 100–1972.
EOQC, Glossary of Terms used in Quality Control, Fourth Edition, July 1976.
NTG-Empfehlung 3001, Zuverlässigkeit elektrischer Bauelemente. NTZ 10, 618–626 (1967), Erläuterungen in NTZ 11, 669–672 (1965).
NTG-Empfehlung 3002, Zuverlässigkeit von Geräten, Anlagen und Systemen. NTZ 23, 45–56 (1970). Erläuterungen in NTZ S. 577–580 (1968).
W. Hilberg, Zuverlässiger Betrieb von LSI-Speichern mit relativ vielen fehlerhaften Bauelementen. Elektron. Rechenanl. 11, H. 6, 321–329 (1969).
W. Hüberg, Einfache mathematische Modelle für die Ausbeute bei integrierten Schaltungen, insbesondere bei Halbleiterspeichern. Elektron. Rechenanlagen 14, H. 2, 67–75, H. 3,134–142(1972).
E. Hölzler and H Holzwarth, Pulstechnik, Bd. II, Anwendungen und Systeme Abschnitt 6.5.2, Fehlerkorrektur in Speicher Systemen.
W. Görke, Zuverlässigkeitsprobleme elektronischer Schaltungen, BI Taschenbuch 820/820a, 1969.
W. Görke, Fehlerdiagnose digitaler Schaltungen, Teubner Studienskripten, 1973.
E. Dombrowski, Einführung in die Zuverlässigkeit elektronischer Geräte und Systeme. AEG-Telefunken, 1970.
Reliability of Semiconductor Devices, Proc. IEEE, Febr. 1974, Vol. 62, No. 2.
Technische Zuverlässigkeit, Springer 1971 (Messerschmitt-Bölkow-Blohm).
M. Weiher, Studienarbeit DS 59, THD, 1976.
T. L. Palfi, MOS Memory System Reliability, Semiconductor Test Symposium, Oct. 14–16, 1975, Digest of papers, pp. 37–46.
L. Levine, Semiconductor Memory Reliability with Error Detecting and Correcting Codes, Computer, Oct. 1976, pp. 43–50.
R. J. Koppel and I. Maltz, Predicting the real costs of semiconductor-memory systems, Electronics, Nov. 25, 1976, pp. 117–122.
Intel Reliability Report RR-7, 1975, N-Channel Silicon Gate MOS 4K RAMs.
Intel Reliability Report RR-6, 1975, Silicon Gate MOS 2K PROM.
Texas Instruments Reliability Report, 4K MOS RAMs.
D. P. Fischer, Failure Investigations on Semiconductor Integrated Circuits. Scientific Principles of Semiconductor Technology. Bad Boll, July 8–12, 1974, pp. 361–385.
W. Hüberg, Die Auswirkung von Integrationsfortschritten und Produktionsverbesserungen auf die mittlere Lebensdauer von Halbleiterschaltungen. Frequenz 31, H10, pp. 302–311.
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1978 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig
About this chapter
Cite this chapter
Hilberg, W. (1978). Effects of Failures on Yield, Integration, Cost and Reliability of Large Scale Integrated Semiconductor Memories. — A Tutorial Review. In: Proebster, W.E. (eds) Digital Memory and Storage. Vieweg+Teubner Verlag. https://doi.org/10.1007/978-3-322-83629-8_21
Download citation
DOI: https://doi.org/10.1007/978-3-322-83629-8_21
Publisher Name: Vieweg+Teubner Verlag
Print ISBN: 978-3-528-08409-7
Online ISBN: 978-3-322-83629-8
eBook Packages: Springer Book Archive