Abstract
The conductivity of compensated GaAs with Nd≈Na≈ ≈2.5.101 7 cm-3 was investigated down to T = 0,5°K. To explain the results of the measurements it was suggested that the electrons at low temperature are localized in a narrow continuum of states near the bottom of the conduction band. At the appropriate concentration of the electrons a Mott transition occurs.
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Vul, B.M. (1974). An Analogue of Mott Transition in Compensated GaAs. In: Pilkuhn, M.H. (eds) Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-94774-1_188
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DOI: https://doi.org/10.1007/978-3-322-94774-1_188
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