Abstract
In this paper we first discuss the effective-mass concept in the theory of impurity states in semiconductors. We show that one cannot be justified in replacing m by the free-electron mass mo for either shallow or deep levels. Instead, we show that rigorous calculations may be interpreted in terms of an effective mass which is either smaller than m* or negative, but not equal to mo. Finally, we report results of new calculations of binding energies using model potentials and compare with our previous results obtained with first-principles pseudopotentials.
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© 1974 Springer Fachmedien Wiesbaden
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Pantelides, S.T. (1974). On the Theory of Impurity States in Semiconductors. In: Pilkuhn, M.H. (eds) Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-94774-1_66
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DOI: https://doi.org/10.1007/978-3-322-94774-1_66
Publisher Name: Vieweg+Teubner Verlag, Wiesbaden
Print ISBN: 978-3-519-03013-3
Online ISBN: 978-3-322-94774-1
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