Abstract
This work examines electro-thermal transport in silicon devices and in single-wall carbon nanotubes (SWNTs). Non-local transport is found to strongly affect heat generation in quasi-ballistic silicon devices. Under such conditions, Joule heat is mainly dissipated in the drain region, and increasing power densities may lead to phonon non-equilibrium. Significant current degradation is observed in suspended SWNTs, which is attributed to the presence of hot optical phonons and to a decrease in thermal conductivity (as ∼ 1/T) at high temperature (T) under self-heating. The high temperature thermal conductivity can then be extracted by using the high bias characteristics of suspended SWNTs.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
E. Pop, C. O. Chui, S. Sinha, R. W. Dutton and K. E. Goodson, “Electrothermal comparison and performance optimization of thin-body SOI and GOI MOSFETs,” Proc. IEDM, p. 411, San Francisco CA (2004).
C. Yu, L. Shi, Z. Yao, D. Li and A. Majumdar, “Thermal conductance and thermopower of an individual single-wall carbon nanotube,” Nano Letters 5, 1842 (2005).
International Technology Roadmap for Semiconductors (ITRS). Online at http://public.itrs.net
E. Pop, R. W. Dutton and K. E. Goodson, “Monte Carlo simulation of Joule heating in bulk and strained silicon,” Appl. Phys. Lett. 86, 82101 (2005).
E. Pop, J. Rowlette, R. W. Dutton and K. E. Goodson, “Joule heating under quasi-ballistic transport conditions in bulk and strained silicon devices,” IEEE SISPAD, Tokyo Japan (2005).
J.-H. Chun, B. Kim, Y. Liu, O. Tornblad, and R. W. Dutton, “Electro-thermal simulations of nanoscale transistors with optical and acoustic phonon heat conduction,” IEEE SISPAD, Tokyo Japan (2005).
J. Lai and A. Majumdar, “Concurrent thermal and electrical modeling of sub-micrometer silicon devices,” J. Appl Phys. 79, 7353 (1996).
S. Sinha, E. Pop and K. E. Goodson, “A split-flux model for phonon transport near hotspots,” Proc. IMECE, Anaheim CA (2004) and J. Heat Transfer in press (2005).
E. Pop, D. Mann, J. Cao, Q. Wang, K. E. Goodson and H. Dai, “Negative differential conductance and hot phonons in suspended nanotube molecular wires,” Phys. Rev. Lett. 95, 155505 (2005).
B. J. LeRoy, S. G. Lemay, J. Kong and C. Dekker, “Electrical generation and absorption of phonons in carbon nanotubes,” Nature 432, 371 (2004).
V. Perebeinos, J. Tersoff and P. Avouris, “Electron-phonon interaction and transport in semiconducting carbon nanotubes,” Phys. Rev. Lett. 94, 086802 (2005).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer-Berlag Berlin Heidelberg
About this paper
Cite this paper
Pop, E., Mann, D., Rowlette, J., Goodson, K., Dai, H. (2006). Electro-Thermal Transport in Silicon and Carbon Nanotube Devices. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_44
Download citation
DOI: https://doi.org/10.1007/978-3-540-36588-4_44
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)