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Growth and Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals for Infrared Detector Applications

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Springer Handbook of Crystal Growth

Part of the book series: Springer Handbooks ((SHB))

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Abstract

Materials for the generation and detection of 7–12 μm wavelength radiation continue to be of considerable interest for many applications such as night vision, medical imaging, sensitive pollution gas monitoring, etc. For such applications HgCdTe has been the main material of choice in the past. However, HgCdTe lacks stability and uniformity over a large area, and only works under cryogenic conditions. Because of these problems, antimony-based III–V materials have been considered as alternatives. Consequently, there has been a tremendous growth in research activity on InSb-based systems. In fact, InSb-based compounds have proved to be interesting materials for both basic and applied research. This chapter presents a comprehensive account of research carried out so far. It explores the materials aspects of indium antimonide (InSb), indium bismuth antimonide (InBi x Sb1–x ), indium arsenic antimonide (InAs x Sb1–x ), and indium bismuth arsenic antimonide (InBi x As y Sb1–x–y ) in terms of crystal growth in bulk and epitaxial forms and interesting device feasibility. The limiting single-phase composition of InAs x Sb1–x and InBi x Sb1–x using near-equilibrium technique has been also addressed. An overview of the structural, transport, optical, and device-related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as device applications are discussed. These include the role of defects and impurity on structural, optical, and electrical properties of the materials.

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Abbreviations

ACRT:

accelerated crucible rotation technique

AFM:

atomic force microscopy

CZ:

Czochralski

DTA:

differential thermal analysis

EDAX:

energy-dispersive x-ray analysis

EPD:

etch pit density

FCA:

free carrier absorption

FWHM:

full width at half-maximum

HRXRD:

high-resolution x-ray diffraction

IR:

infrared

LED:

light-emitting diode

LP:

low pressure

LPE:

liquid-phase epitaxy

LPEE:

liquid-phase electroepitaxy

MBE:

molecular-beam epitaxy

MCT:

HgCdTe

ME:

melt epitaxy

ME:

microelectronics

MOCVD:

metalorganic chemical vapor deposition

MOCVD:

molecular chemical vapor deposition

MOVPE:

metalorganic vapor-phase epitaxy

QDT:

quantum dielectric theory

RBM:

rotatory Bridgman method

RT:

room temperature

SEM:

scanning electron microscope

SEM:

scanning electron microscopy

SI:

semi-insulating

TEM:

transmission electron microscopy

TGZM:

temperature gradient zone melting

THM:

traveling heater method

VCA:

virtual-crystal approximation

XPS:

x-ray photoelectron spectroscopy

XPS:

x-ray photoemission spectroscopy

XRD:

x-ray diffraction

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  1. Semiconductor Laser Section, Solid State Laser Division, Raja Ramanna Center for Advance Technology, Rajendra Nagar, RRCAT., 452013, Indore, India

    Vijay K. Dixit

  2. Department of Physics, Indian Institute of Science, CV Raman Avenue, 560012, Bangalore, India

    Handady L. Bhat

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    Govindhan Dhanaraj Dr.

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Dixit, V.K., Bhat, H.L. (2010). Growth and Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals for Infrared Detector Applications. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_11

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