Abstract
Point defects in SiC is important in connection with the technological concerns such as ion implantation, crystal growth and radiation tolerance. Among different types of point defects, vacancy defects have been frequently argued in the past studies on irradiated SiC using deep level transient spectroscopy (DLTS), electron spin resonance (ESR), photoluminescence (PL), etc. Although these conventional approaches have a capability to discriminate different defect species, even indirect for the determination of the type of defects. Consequently, the origins of important energy levels in SiC have not yet been fully understood.
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Kawasuso, A. et al. (2004). Vacancy Defects Detected by Positron Annihilation. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_23
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