Abstract
The fabrication of capacitive pressure sensors using silicon integrated circuit processing is described. The pressure sensors were fabricated using planar etch processing techniques. This results in very small sensors having membrane diameters between 50 μm and 150 μm. The pressure dependence was studied up to 5 bars. Concepts for on chip signal conditioning by using the switch-capacitor method are given.
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References
H. Guckel and D. W. Burns, “Planar Processed Polysilicon Sealed Carities for Pressure Transducers Arrays”, IEDM 1984, 223–225.
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© 1990 Springer-Verlag Berlin Heidelberg
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Kandler, M., Eichholz, J., Manoli, Y., Mokwa, W. (1990). CMOS Compatible Capacitive Pressure Sensor with Read-Out Electronics. In: Reichl, H. (eds) Micro System Technologies 90. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-45678-7_81
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DOI: https://doi.org/10.1007/978-3-642-45678-7_81
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-45680-0
Online ISBN: 978-3-642-45678-7
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