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Growth, Properties and Applications of Narrow-Gap Semiconductors

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Organic Crystals, Germanates, Semiconductors

Part of the book series: Crystals ((CRYSTALS,volume 4))

Abstract

This article reviews selected properties of the narrow-gap semiconductors Pb1-xSnx Te, Pb1-xSnxSe and Hg1-xCdxTe which are accepted for infrared device applications, recently even in large-scale production.

The production aspect gave rise to a detailed description of the crystal growth as a first and decisive factor for device economy. Particular emphasis is placed on the important role of the thermodynamic parameters (phase diagrams) for growth, doping and physical properties of bulk crystals as well as epitaxial layers. The various growth methods are described and compared in detail.

The device aspect will be considered for photodetectors and tunable diode lasers as modern examples of applications in thermal imaging and gas spectroscopy around 10 μm.

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  1. AEG-Telefunken, Semiconductor Division, D-7100, Heilbronn, Federal Republic of Germany

    Horst Maier & Joachim Hesse

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Maier, H., Hesse, J. (1980). Growth, Properties and Applications of Narrow-Gap Semiconductors. In: Organic Crystals, Germanates, Semiconductors. Crystals, vol 4. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-67764-9_3

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