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Depth Selective Real Structure Analysis of Semiconductor Superlattices Using Grazing Incidence X-Ray Diffraction

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Surface X-Ray and Neutron Scattering

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 61))

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Abstract

The periodicity of superlattices(SL) and its deviation perpendicular to the surface can be detected using X-ray grazing incidence diffraction (GID). Depth resolution is obtained by measuring rod scans at angles of incidence smaller or larger than the critical angle of total external reflection. First experimental curves measured from a lattice matched SL are interpreted in terms of a kinematical approach. The capability of the method for a depth resolved characterization is dicussed by simulation of the GID pattern for a partially relaxed strained layer SL.

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References

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© 1992 Springer-Verlag Berlin Heidelberg

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Pietsch, U. (1992). Depth Selective Real Structure Analysis of Semiconductor Superlattices Using Grazing Incidence X-Ray Diffraction. In: Zabel, H., Robinson, I.K. (eds) Surface X-Ray and Neutron Scattering. Springer Proceedings in Physics, vol 61. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77144-6_43

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  • DOI: https://doi.org/10.1007/978-3-642-77144-6_43

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-77146-0

  • Online ISBN: 978-3-642-77144-6

  • eBook Packages: Springer Book Archive

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