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Mode-Control Techniques in Semiconductor Lasers

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Process Technology for Semiconductor Lasers

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 30))

Abstract

It is very important for semiconductor lasers to have stable transverse and longitudinal modes in order to obtain reliable performance. This is achieved by using an index waveguide structure. One of the most common techniques to control the longitudinal mode is to equip the inside of the device with a grating structure, created by overgrowth epitaxy. The LPE growth technique is the most suitable for this purpose. This is partly due to the phenomenon that LPE tends to flatten the surface, which is remarkable in comparison with other epitaxial growth techniques. This feature greatly helps in the fabrication of transverse-mode-controlled structures such as V-groove structures, buried heterostructures, Distributed FeedBack (DFB) and Distributed Bragg Reflector (DBR) structures. The theory behind stabilizing transverse and longitudinal modes and its importance will be explained. Next, structured epitaxial techniques will be summarized in Sects.9.3–6, and the fabrication of multilayer structures will be described in Sects.9.7 and 8.

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Authors and Affiliations

  1. Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan

    Professor Dr. Kenichi Iga & Dr. Susumu Kinoshita

Authors
  1. Professor Dr. Kenichi Iga
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  2. Dr. Susumu Kinoshita
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© 1996 Springer-Verlag Berlin Heidelberg

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Iga, K., Kinoshita, S. (1996). Mode-Control Techniques in Semiconductor Lasers. In: Process Technology for Semiconductor Lasers. Springer Series in Materials Science, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79576-3_9

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  • DOI: https://doi.org/10.1007/978-3-642-79576-3_9

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-79578-7

  • Online ISBN: 978-3-642-79576-3

  • eBook Packages: Springer Book Archive

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