Abstract
Filling-dependent electronic structures in titanium and vanadium oxides with perovskite-like structures have been investigated by measurements of optical conductivity spectra as well as by characterization of transport and magnetic properties. With use of orthorhombically distorted solid solutions, (R,A)TiO3 and (R,A)VO3 (R = rare earth and A = alkaline earth ions), a crossover behavior of the electronic states from the Mott insulator to Pauli metal has been unraveled as a function of the fillingness. The role of the electron correlation in the metal-insulator transitions manifests itself in filling-dependent enhancement of effective electron mass and in doping-induced ingap states.
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© 1993 Springer-Verlag Berlin, Heidelberg
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Tokura, Y., Taguchi, Y. (1993). Change of Electronic Structures with Varying Lattice Distortion and Metal Valence in Titanium and Vanadium Oxides. In: Kuzmany, H., Mehring, M., Fink, J. (eds) Electronic Properties of High-Tc Superconductors. Springer Series in Solid-State Sciences, vol 113. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84865-0_41
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DOI: https://doi.org/10.1007/978-3-642-84865-0_41
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