Abstract
Pronounced decrease in the silicon Raman intensity as the temperature was increased has been measured with a Nd: YAG laser. A brief extension of resonance Raman effect is made for semiconductors with indirect energy band gap. The progression of the LO and TO Raman active modes of CdSe is presented as the S concentration was increased for various alloys of CdSxSe1-x. The effect of anharmonic forces in shifting the LO and TO modes of GaAs and in broadening the linewidths of these modes and the triply degenerate mode of silicon has been measured from 10°K to 475°K.
Work supported in part by U. S. Air Force Cambridge Research Laboratories, Office of Aerospace Research and the Office of Naval Research.
Alfred P. Sloan Foundation Research Fellow.
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Chang, R.K., Ralston, J.M., Keating, D.E. (1969). Temperature Dependence of Raman Linewidth and Intensity of Semiconductors. In: Wright, G.B. (eds) Light Scattering Spectra of Solids. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-87357-7_40
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