Abstract
Electron paramagnetic resonance (EPR) spectroscopy has been extensively employed to investigate the presence, localization, distribution and interaction with the host crystalline lattice of the paramagnetic point defects (intrinsic defects and transition metal ions) in semiconductors. The retrieval of such information for nanostructured semiconductors is considerably more difficult, due to the high disorder level in such systems, reflected in broad, featureless EPR spectra. We show here how, with proper adjustments of the EPR experiments and accurate numerical analysis of the resulting spectra, it was possible to obtain more accurate information regarding the localization and structure of various Mn2+ centers in ZnS and ZnO semiconductor nanoparticles (NPs). This lead to the observation and investigation of size related effects such as the presence of the extended lattice defect assisted incorporation of impurities in small (~3 nm) cubic ZnS NPs, the dominant size induced lattice disorder observed for ZnO NPs, independent of the synthesis procedures, or the three steps decomposition of the ε-Zn(OH)2 disordered shell of ZnS NPs with formation of new oxy-hydrated zinc compounds. These effects can be used to synthesize semiconductor nanoparticles with controlled size distribution, doping level and functionalized surfaces for specific technological applications.
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Acknowledgments
The original work described here was supported by CNCSIS-UEFISCSU through projects no. 788/2006, CEX no. 38/2006, PN-II-ID-PCE no. 523/2008 and PN-II-ID no.74/2011. We would like to thank Leona C. Nistor, Doina C. Mateescu, Narcis J. Barascu, Ioana Vlaicu and Dan Zernescu for contributions along the years to the work contained within the manuscript. This chapter was written through equal contributions of all authors.
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Stefan, M., Nistor, S.V., Ghica, D. (2014). ZnS and ZnO Semiconductor Nanoparticles Doped with Mn2+ Ions. Size Effects Investigated by EPR Spectroscopy. In: Kuncser, V., Miu, L. (eds) Size Effects in Nanostructures. Springer Series in Materials Science, vol 205. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44479-5_1
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