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GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method

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Size Effects in Nanostructures

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 205))

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Abstract

The structure of GeSiO films resulted from deposition and annealing conditions draws their electrical behaviour. GeSiO films prepared either by magnetron sputtering or sol-gel method and subsequently annealed are formed of Ge nanocrystals and/or amorphous Ge nanoparticles embedded in amorphous SiO2 matrix. Firstly, the size effect which is the main effect in these systems produces specific quantum confinement energy levels in the enlarged forbidden energy band gap in nanocrystals. Secondly, these films are percolative systems, so that the main conduction mechanisms which govern the electrical behaviour are the tunnelling and hopping between neighbouring Ge nanocrystals or amorphous nanoparticles. Accordingly, the charge transport is strongly determined by the structure and morphology of films.

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Acknowledgements

The contribution to this work was supported by the Romanian National Authority for Scientific Research through the CNCS–UEFISCDI Contract No. PN II-PT-PCCA-9/2012.

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Authors and Affiliations

  1. National Institute of Materials Physics, 077125, Bucharest, Magurele, Romania

    M. L. Ciurea, V. S. Teodorescu, I. Stavarache & A. M. Lepadatu

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  1. M. L. Ciurea
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  2. V. S. Teodorescu
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  3. I. Stavarache
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  4. A. M. Lepadatu
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Correspondence to M. L. Ciurea , V. S. Teodorescu , I. Stavarache or A. M. Lepadatu .

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Editors and Affiliations

  1. Magnetism and Superconductivity, National Institute of Materials Physics, Magurele, Romania

    Victor Kuncser

  2. Magnetism and Superconductivity, National Institute of Materials Physics, Magurele, Romania

    Lucica Miu

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Ciurea, M.L., Teodorescu, V.S., Stavarache, I., Lepadatu, A.M. (2014). GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method. In: Kuncser, V., Miu, L. (eds) Size Effects in Nanostructures. Springer Series in Materials Science, vol 205. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44479-5_3

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