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Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)

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Book cover Size Effects in Nanostructures

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 205))

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Abstract

Oxide materials are becoming of increasing interest due to their large variety of physical properties such as dielectric, magnetism, superconductivity, conductivity, ferroelectricity, multiferroism, etc. In addition, interfacing oxides with other materials is conferring new or better device functionalities. The main physical properties of oxides interfaces and their impact on the electrical properties of interest for microelectronic applications are presented. Further on, this subchapter is also devoted to the investigation and understanding of interface effects observed in heterostructures containing linear (SiO2) and non-linear (ferroelectrics) dielectrics in combination with wide-band gap semiconductor materials (e.g. ZnO and SiC) with special emphasis on size effects, interface quality and the opportunity to control the emergent phenomena in Metal-Oxide-Semiconductor (MOS) and Metal-Ferroelectric-Semiconductor (MFS) materials systems.

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Acknowledgements

The authors acknowledges the financial support from the Romanian Ministry of Education-UEFISCDI under the contracts PCCE 3/2012 and PN45N L. D. Filip acknowledges the financial support from the Romanian Ministry of Education-UEFISCDI under the contract PN-II-RU-TE-2012-3-0320. L. Pintilie wish also to thank to his collaborators from the Max Planck Institute for Micro-structure Physics, Halle/Saale, Germany, for providing some samples of PZT thin films and PZT-PZO super-lattices (Dr. K. Boldyreva, Dr. I. Vrejoiu, Dr. M. Alexe and Prof. D. Hesse). I. Pintilie and L.D. Filip gratefully acknowledge the fruitful discussions and collaboration with Prof. B. G. Svensson from Center for Materials Science and Nanotechnology, Oslo University, and also Drs. A. Poggi, R. Nipoti, F. Moscatelli and S. Solmi from CNR- IMM of Bologna for processing some of the SiC samples used in these studies. The authors are also grateful for the magnetic measurements performed by our colleagues, V. Kuncser, G. Schinteie.

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  1. National Institute of Materials Physics, 077125, Bucharest, Magurele, Romania

    I. Pintilie, L. Pintilie, L. D. Filip, L. C. Nistor & C. Ghica

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  1. I. Pintilie
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Correspondence to I. Pintilie , L. Pintilie , L. D. Filip , L. C. Nistor or C. Ghica .

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Editors and Affiliations

  1. Magnetism and Superconductivity, National Institute of Materials Physics, Magurele, Romania

    Victor Kuncser

  2. Magnetism and Superconductivity, National Institute of Materials Physics, Magurele, Romania

    Lucica Miu

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Pintilie, I., Pintilie, L., Filip, L.D., Nistor, L.C., Ghica, C. (2014). Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures). In: Kuncser, V., Miu, L. (eds) Size Effects in Nanostructures. Springer Series in Materials Science, vol 205. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44479-5_4

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