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AlGaN Epitaxial Technology

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Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

Abstract

During the development of semiconductor science and technology, Si and Ge were the first-generation semiconductor material, while GaAs, InP are known as the second-generation semiconductor material. In recent years, rapid developments have occurred in GaN and related materials (including AlN, AlGaN, GaN, InGaN, and InN), thus becoming the third-generation of semiconductor material.

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Authors and Affiliations

  1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

    Li He

  2. Tianjin Lishen Battery Joint-Stock Co. Ltd., Tianjin, China

    Dingjiang Yang

  3. Opto-electronics School, Beijing Institute of Technology, Beijing, China

    Guoqiang Ni

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He, L., Yang, D., Ni, G. (2016). AlGaN Epitaxial Technology. In: Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52718-4_4

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