Abstract
Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam diameter is a promising alternative fabrication technique for high-resolution nanostructures at high pattern densities. Key principles and critical conditions of the technique are explained. From existing data, the fundamental factors underlying the sensitivity gain by 1–2 orders of magnitude and the prospects for high resolution at high pattern densities are analysed. State-of-the-art performance of the technique is illustrated with experimental achievements in HSQ and PMMA resists. Exploratory SHIBL work on aluminum oxide resist is presented as a novel approach to overcome potential shot noise effects in pattern definition and to improve masking capabilities in subsequent pattern transfer.
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Acknowledgements
This research is part of NanoNed, a national research program on nanotechnology, funded by the Dutch Ministry of Economic Affairs of the Netherlands. Our colleagues Ing A.K. van Langen-Suurling, Dr. V. A. Sidorkin, Dr. P.F.A. Alkemade, Prof. H.W.M. Salemink from TU Delft and Dr. E. van Veldhoven from TNO are gratefully acknowledged for their experimental contributions and discussions. The authors acknowledge Prof. D. Joy, Dr. L. Scipioni, Dr. S. Sijbrandij, Dr. Postek, Dr. Livengood, Dr. Vyvenko and Dr. D. Winston for giving permission to use certain figures and data, as indicated in the text.
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van der Drift, E., Maas, D.J. (2012). Helium Ion Lithography. In: Stepanova, M., Dew, S. (eds) Nanofabrication. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0424-8_4
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