Abstract
The retention time characteristics in DRAM cells are strongly influenced by various leakage mechanisms near the storage node junction. In this work, we present a full three-dimensional analysis of stress distributions in and around the active area of high-density memory cells. We use a combination of high-resolution metrology analysis and 3D numerical modeling to provide quantitative estimates. Since shallow - trench isolation (STI) process used in high-density cells is one of the major contributors to stress, we study the effects of various materials used to fill the trench. Our electron diffraction contrast (EDC) methodology provides a spatial resolution on the order of 10 nm with sensitivity on of the order of tens of MPa and therefore useful for the analysis of scaled high density memory cells.
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Li, J., Hull, R., Yang, R., Hou, V., Mouli, C. (2004). Three-Dimensional Characterization and Modeling of Stress Distribution in High-Density DRAM Memory Cells. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_17
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_17
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
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