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Simulation of Semiconductor Devices and Processes pp 218–221Cite as

A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFET’s

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Abstract

In this paper we present a physics-based, compact model for the threshold voltage shift in short-channel MOSFET’s, which is based upon a new theoretical approach in MOS modeling. This method uses conformai mapping techniques to solve the 2D Poisson equation in the space charge region underneath the gate and considers inhomogeneous doping profiles therein. The derived model equations appear in closed form and require only two physical fitting parameters related to a geometry and a doping approximation. A comparison with numerical device simulations reveals a high degree of accurateness down to channel lengths of 0.2µm.

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References

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Author information

Authors and Affiliations

  1. Solid State Electronics Laboratory, Technical University of Darmstadt, Schloßgartenstraße 8, D-64289, Darmstadt, Germany

    A. Klös & A. Kostka

Authors
  1. A. Klös
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  2. A. Kostka
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Klös, A., Kostka, A. (1995). A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFET’s. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_52

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_52

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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