Abstract
We first introduce the Maxwell’s equations about the electromagnetic field and the Hamiltonian of electron in the electromagnetic field from which we obtain the formula for light-matter interaction which forms the base for the optical electronics. We discuss the general absorption and emission spectra of nanostructure materials. Major focus of the rest of the chapter is about electron-hole pair, i.e., exciton in nanostructures which is the base for the fast developing nanophotonics.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Sze SM (1981) Physics of semiconductor devices, 2nd edn. Wiley, New York, p 32
Goeppert Mayer M (1931) Elementary processes with two quantum jumps. Ann Phys (Leipz) 9:273–294
Lami J-F, Gilliot P, Hirlimann C (1996) Observation of interband two-photon absorption saturation in CdS. Phys Rev Lett 77:1632–1635
Helmchen F, Svododa K, Denk W, Kleinfeld D, Tank DW (1996) In vivo dendritic calcium dynamics in deep-layer cortical pyramidal neurons. Nat Neurosci 2:989–996
Yokoyama H, Guo H, Yoda T, Takashima K, Sato K-I, Taniguchi H, Ito H (2006) Two-photon bioimaging with picosecond optical pulses from a semiconductor laser. Opt Express 14:3467–3471
Wherrett BS (1984) Scaling rules for multiphoton interband absorption in semiconductors. J Opt Soc Am B 1:67–72
Schmidt ME, Blanton SA, Hines MA, Guyot-Sionnest P (1996) Size-dependent two-photon excitation spectroscopy of CdSe nanocrystals. Phys Rev B 53:12629–12632
Haken H (1963) Theory of exciton II. In: Kuper CG, Whitfield GD (eds) Polarons and excitons. Plenum, New York, p 295
Dimmock JO (1967) Introduction to the theory of exciton states in semiconductors. In: Willardson RK, Beer AC (eds) Semiconductors and semimetals, vol 3. Academic Press, New York, pp 259–319, Chap. 7
Haken H (1983) Quantum field theory of solids. North-Holland, Amsterdam, p 151
Lawaetz P (1971) Valence-band parameters in cubic semiconductors. Phys Rev B 4:3460–3467
Madelung O (ed) (1991) Semiconductors group IV elements and III–V compounds. Springer, Berlin
Miller DAB, Chemla DS, Eilenberg DJ, Smith PW, Gossard AC, Tsang WT (1982) Large room-temperature optical nonlinearity in GaAs/Ga1−x Al x As multiple quantum well structures. Appl Phys Lett 41:679–681
Sun HD, Makino T, Segawa Y, Kawasaki M, Ohtomo A, Tamura K, Koinuma H (2002) Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells. J Appl Phys 91:1993–1997
Sapra S, Sarma DD (2004) Evolution of the electronic structure with size in II–VI semiconductor nanocrystals. Phys Rev B 69:125304
Lippens PE, Lannoo M (1990) Comparison between calculated and experimental values of the lowest excited electronic state of small CdSe crystallites. Phys Rev B 41:6079–6081
Brus LE (1984) Electron-electron and electron-hole interactions in small semiconductor crystallites: the size dependence of the lowest excited electronic state. J Chem Phys 80:4403–4409
Nair SV, Sinha S, Rustagi KC (1987) Quantum size effects in spherical semiconductor microcrystals. Phys Rev B 35:4098–4101
Kayanuma Y, Momiji H (1990) Incomplete confinement of electrons and holes in microcrystals. Phys Rev B 41:10261–10263
Grabovskis VYa, Dzenis YaYa, Ekimov AI, Kudryavtsev IA, Tolstoi MN, Rogulis UT (1989) Photoionization of semiconducting microcrystals in glass [luminescence studies]. Fiz Tverd Tela 31:272–275
Grabovskis VYa, Dzenis YaYa, Ekimov AI, Kudryavtsev IA, Tolstoi MN, Rogulis UT (1989) Sov Phys, Solid State 31:149–151
Swank RK (1967) Surface properties of II–VI compounds. Phys Rev 153:844–849
Bujatti M (1968) CdS-metal barriers from photovoltage measurements. Brit J Appl Phys (J Phys D), Ser 2 1:581–584
Lippens PE, Lannoo M (1989) Calculation of the bandgap for small CdS and ZnS crystallites. Phys Rev B 39:10935–10942
Madelung O (ed) (1992) Data in science and technology: semiconductors other than group IV elements and III–V compounds. Springer, Boston
Einevoll GT (1992) Confinement of excitons in quantum dots. Phys Rev B 45:3410–3417
Nair SV, Ramaniah LM, Rustagi KC (1992) Electron states in a quantum dot in an effective-bond-orbital model. Phys Rev B 45:5969–5979
Vogl P, Hjalmarson HP, Dow JD (1983) A semi-empirical tight-binding theory of the electronic structure of semiconductor. J Phys Chem Solids 44:365–378
Sapra S, Shanthi N, Sarma DD (2002) Realistic tight-binding model for the electronic structure of II–VI semiconductors. Phys Rev B 66:205202
Jiang J, Gao B, Han T-T, Fu Y (2009) Ab initio study of energy band structures of GaAs nanoclusters. Appl Phys Lett 94, 092110
van der Waerden BL (1932) Die Gruppentheoretische Methode in der Quantenmechanik. Springer, Berlin
Racah G (1942) Theory of complex spectra. II. Phys Rev 62:438–462
Fu Y, Willander M, Ivchenko EL (2000) Photonic dispersions of semiconductor-quantum-dot-array-based photonic crystals in primitive and face-centered cubic lattices. Superlattices Microstruct 27:255–264
Jacobini C, Reggiani L (1983) The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev Mod Phys 55:645–705
Ridley BK (1988) Quantum processes in semiconductors, 2nd edn. Clarendon, Oxford
Han T-T, Fu Y, Ågren H (2008) Dynamic photon emission from multiphoton-excited semiconductor quantum dot. J Appl Phys 103:93703(6)
Reynolds DC, Litton CW, Collins TC (1971) Bound-phonon quasiparticle in CdS. Phys Rev B 4:1868–1872
Pan AL, Liu RB, Zou BS (2006) Phonon-assisted stimulated emission from single CdS nanoribbons at room temperature. Appl Phys Lett 88:173102(3)
Rustagi KC, Weber W (1976) Adiabatic bond charge model for the phonons in A 3 B 5 semiconductors. Solid State Commun 18:673–675
Sugawara M, Mukai K, Shoji H (1997) Effect of phonon bottleneck on quantum-dot laser performance. Appl Phys Lett 71:2791
Murdin BN, Hollingworth AR, Kamal-Saadi M, Kotitschke RT, Ciesla CM, Pidgeon CR, Findlay PC, Pellemans HPM, Langerak CJGM, Rowe AC, Stradling RA, Gornik E (1999) Suppression of LO phonon scattering in Landau quantized quantum dots. Phys Rev B 59:R7817–R7820
Nozik AJ (2002) Quantum dot solar cells. Physica E 14:115–120
Schaller RD, Klimov VI (2004) High efficiency carrier multiplication in PbSe nanocrystals: implications for solar energy conversion. Phys Rev Lett 92:186601
Hanna M, Ellingson RJ, Beard M, Yu P, Nozik AJ (2004) Quantum dot solar cells: high efficiency through impact ionization. In: DOE solar energy technologies program review meeting, October 25–28, 2004, Denver, USA
Kim SJ, Kim WJ, Sahoo Y, Cartwright AN, Prasad PN (2008) Multiple exciton generation and electrical extraction from a PbSe quantum dot photoconductor. Appl Phys Lett 92:31107(3)
Trinh MT, Houtepen AJ, Schins JM, Hanrath T, Piris J, Knulst W, Goossens APLM, Siebbeles LDA (2008) In spite of recent doubts carrier multiplication does occur in PbSe nanocrystals. Nano Lett 8:1713–1718
Landau LD, Lifshitz EM (1962) Quantum mechanics, 3rd edn. Pergamon, Oxford, p 278
Ridley BK (1988) Quantum processes in semiconductors. Clarendon, Oxford, pp 269–278
Landsberg PT, Adams MJ (1973) Theory of donor-acceptor radiative and Auger recombination in simple semiconductors. Proc R Soc Lond A 334:523–539
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Fu, Y. (2014). Optical Properties of Semiconductors. In: Physical Models of Semiconductor Quantum Devices. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-7174-1_3
Download citation
DOI: https://doi.org/10.1007/978-94-007-7174-1_3
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-007-7173-4
Online ISBN: 978-94-007-7174-1
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)