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Electronic Structure of Metal-Semiconductor Contacts

  • Book
  • © 1990

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Editors:
  1. Winfried Mönch

    1. Universität Duisburg, Germany

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Part of the book series: Perspectives in Condensed Matter Physics (PCMP, volume 4)

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Table of contents (41 chapters)

  1. Front Matter

    Pages I-XII
    Download chapter PDF

  2. Introduction

    • Winfried Mönch
    Pages 1-33

  3. Ueber die Stromleilung dutch Schwefelmetalle

    • F. Von Braun
    Pages 37-44

  4. Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern

    • W. Schottky, W. Deutschmann
    Pages 45-52

  5. Halbleitertheorie der Sperrschicht

    • W. Schottky
    Pages 53-53

  6. Note on The Contact Between a Metal and an Insular or Semi-Conductor

    • N. F. Mott
    Pages 54-58

  7. Abweichungen vom Ohmschen Gesetz in Halbleitern

    • Von W. Schottky
    Pages 59-62

  8. Surface States and Rectification at a Metal Semi-Conductor Contact

    • John Bardeen
    Pages 63-73

  9. Surface States and Barrier Height of Metal-Semiconductor Systems

    • A. M. Cowley, S. M. Sze
    Pages 74-82

  10. Theory of Surface States

    • Volker Heine
    Pages 83-90

  11. Fundamental Transition in The Electronic Nature of Solids

    • S. Kurtin, T. C. McGill, C. A. Mead
    Pages 91-94

  12. Density of states and barrier height of metal-Si contacts

    • F. Yndurain
    Pages 95-104

  13. Metal-semiconductor Junctions for (110) Surfaces of Zinc-blende Compounds

    • E. Louis, F. Yndurain, F. Flores
    Pages 105-115

  14. Electronic structure of a metal-semiconductor interface

    • Steven G. Louie, Marvin L. Cohen
    Pages 116-124

  15. Ionicity and the theory of Schottky barriers

    • Steven G. Louie, James R. Chelikowsky, Marvin L. Cohen
    Pages 125-133

  16. Chemical trends in metal-semiconductor barrier heights

    • M. Schlütcr
    Pages 134-137

  17. Transition in Schottky Barrier Formation with Chemical Reactivity

    • L. J. Brillson
    Pages 138-141

  18. New and unified model for Schottky barrier and III-V insulator interface states formation

    • W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, I. Lindau
    Pages 142-152

  19. Schottky barriers: An effective work function model

    • J. L. Freeouf, J. M. Woodall
    Pages 154-156

  20. The formation of the Schottky barrier at the V/Si interfacea)

    • J. G. Clabes, G. W. Rubloff, B. Reihl, R. J. Purtell, P. S. Ho, A. Zartner et al.
    Pages 157-160
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About this book

Interface and surface science have been important in the development of semicon­ ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor­ insulator interfaces, heterojunctions between distinct semiconductors, and metal­ semiconductor contacts. The latter ones stood almost at the very beginning of semi­ conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Editors and Affiliations

  • Universität Duisburg, Germany

    Winfried Mönch

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