Summary
Schottky barrier structures have been made with n-type hydrogenated amorphous silicon (a-Si:H) prepared by the glow discharge decomposition of SiH4. The density of gap states N(E) in the depletion layer of these diodes has been determined by analysing the current transients caused by the emission of electrons after removal of a small forward bias. Depending on the preparation conditions, the dopant concentration and the history of the structures (exposure to light, electron bombardment) N(E) near midgap ranges from 3.1015 to 10l8cm-3. The distribution of states is more similar to that deduced from field effect and space charge limited current data than to DLTS results.
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© 1982 ECSC, EEC, EAEC, Brussels and Luxembourg
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Beichler, J., Mell, H. (1982). Study of Gap States in a-Si:H by Transient Current Spectroscopy. In: Bloss, W.H., Grassi, G. (eds) Fourth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-7898-0_88
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DOI: https://doi.org/10.1007/978-94-009-7898-0_88
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