Abstract
The role of hydrogen dilution of the gas mixtures of silane and germane on the growth and the structural and photo-electrical properties of a-SiGe:H alloys was studied. Hydrogen dilution was found to be of major importance to grow a-SiGe:H films with highly improved photo-electrical properties, which are suitable for device applications. DOS around midgap was studied by CPM and SCLC. DOS increases with higher Ge concentration in the films, which also affects the distribution of states in the gap.
Hydrogen plasma etching was used to investigate the morphology of the films. SEM micrographs of the etched films demonstrate the heterogeneous network of the amorphous thin films. IR and Raman spectroscopy was used to study the influence of etching on the structure of the films.
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© 1991 Springer Science+Business Media Dordrecht
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Zeman, M., Tao, G., Geerts, M.J., Metselaar, J.W., Ferreira, I. (1991). The Effect of Hydrogen on the Plasma Deposition of a-SiGe:H Thin Films for Tandem Solar Cell Applications. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_242
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DOI: https://doi.org/10.1007/978-94-011-3622-8_242
Publisher Name: Springer, Dordrecht
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